Growth Mechanism and Strain Variation of GaN Material Grown on Patterned Sapphire Substrates With Various Pattern Designs-Reference-Cited by-同舟云学术

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Growth Mechanism and Strain Variation of GaN Material Grown on Patterned Sapphire Substrates With Various Pattern Designs

Published:2011-07 Issue:14 Volume:23 Page:962-964
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Wang Mei-Tan,Liao Kuan-Yung,Li Yun-Li

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/5899000/05756455.pdf?arnumber=5756455

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3. The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities;Nanomaterials;2023-08-01

4. Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate;Micromachines;2023-03-29

5. Excitation-dependent spatially resolved photoluminescence in InGaN/GaN LEDs with air-cavity arrays grown on patterned sapphire substrates;Optical Materials Express;2022-11-04

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