The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Abstract

Low-threshold lasing under pulsed optical pumping is demonstrated in GaN-based microrod cavities at room temperature, which are fabricated on the patterned sapphire substrates (PSS). Because the distribution of threading dislocations (TDs) is different at different locations, a confocal micro-photoluminescence spectroscopy (μ-PL) was performed to analyze the lasing properties of the different diameter microrods at the top of the triangle islands and between the triangle islands of the PSS substrates, respectively. The μ-PL results show that the 2 μm-diameter microrod cavity has a minimum threshold of about 0.3 kW/cm2. Whispering gallery modes (WGMs) in the microrod cavities are investigated by finite-difference time-domain simulation. Combined with the dislocation distribution in the GaN on the PSS substrates, it is found that the distribution of the strongest lasing WGMs always moves to the region with fewer TDs. This work reveals the connection between the lasing modes and the dislocation distribution, and can contribute to the development of low-threshold and high-efficiency GaN-based micro-lasers.