Growth and characterization of GaN-based LED wafers on La0.3Sr1.7AlTaO6 substrates
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC00916E
Reference55 articles.
1. InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
2. Radiation effects in GaN materials and devices
3. Localized surface plasmon enhanced light-emitting devices
4. Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates
5. GaN light-emitting diodes on glass substrates with enhanced electroluminescence
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