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Radiation effects in GaN materials and devices

Published:2013 Issue:5 Volume:1 Page:877-887
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Polyakov Alexander Y.,Pearton S. J.,Frenzer Patrick,Ren Fan,Liu Lu,Kim Jihyun

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C2TC00039C

Reference105 articles.

1. Radiation hardness of gallium nitride

2. Defect Donor and Acceptor in GaN

3. Molecular dynamics study of damage accumulation in GaN during ion beam irradiation

4. Effect of ion species on the accumulation of ion-beam damage inGaN

5. N vacancies in AlxGa1−xN

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1. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors;Journal of Semiconductors;2024-09-01

2. Investigation of Electrical Characteristics and Trapping Effects in p-GaN Gate HEMTs Under Electron Irradiation;IEEE Transactions on Electron Devices;2024-08

3. Influence of 700 keV O ³⁺ ion implantation on current transport properties of Cr/p-GaN SBD’s;Radiation Effects and Defects in Solids;2024-07-16

4. Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD;Journal of Physics D: Applied Physics;2024-05-13

5. Effects of radiation damage on GaN epitaxial layer arising from argon ion implantation for edge termination;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05

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