Effect of ion species on the accumulation of ion-beam damage inGaN
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.035202/fulltext
Reference34 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
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5. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
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