Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.2530/fulltext
Reference26 articles.
1. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
2. Ca and O ion implantation doping of GaN
3. Ion implantation doping and isolation of GaN
4. H, He, and N implant isolation of n‐type GaN
5. Implant isolation of InxAl1−xN and InxGa1−xN
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