Molecular dynamics study of damage accumulation in GaN during ion beam irradiation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.184104/fulltext
Reference23 articles.
1. Damage to epitaxial GaN layers by silicon implantation
2. Lattice expansion of Ca and Ar ion implanted GaN
3. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
4. Amorphization of GaN by ion implantation
5. Ion-beam-induced porosity of GaN
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