Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature-Reference-Cited by-同舟云学术

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Published:2020-04 Issue:4 Volume:257 Page:1900554
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Takahashi Masahiro¹^ORCID,Tanaka Atsushi²³,Ando Yuto¹,Watanabe Hirotaka²,Deki Manato²,Kushimoto Maki¹,Nitta Shugo²,Honda Yoshio²,Shima Kohei⁴,Kojima Kazunobu⁴,Chichibu Shigefusa F.²⁴,Chen Kevin J.²⁵,Amano Hiroshi²³⁶⁷

Affiliation:

1. Graduate School of EngineeringNagoya University Nagoya 464-8603 Japan

2. Institute of Materials and Systems for SustainabilityNagoya University Nagoya 464-8601 Japan

3. National Institute for Materials Science Tsukuba 305-0044 Japan

4. Institute of Multidisciplinary Research for Advanced MaterialsTohoku University Sendai 980-8577 Japan

5. Department of Electronic and Computer EngineeringHong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China

6. Akasaki Research CenterNagoya University Nagoya 464-8603 Japan

7. Venture Business LaboratoryNagoya University Nagoya 464-8603 Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900554

Reference26 articles.

1. Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

2. Characterization of an Mg‐implanted GaN p–i–n diode

3. P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

4. Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

5. Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

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