Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
Author:
Affiliation:
1. IMaSS, Nagoya University, Aichi 464-8601, Japan
2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Funder
Polish National Science Centre
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116866
Reference33 articles.
1. Vertical Power p-n Diodes Based on Bulk GaN
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4. Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation
5. Ion implantation doping and isolation of GaN
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