Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model-Reference-Cited by-同舟云学术

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Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

Published:2017-06-28 Issue:24 Volume:121 Page:245109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Park K.¹²,Stroscio M. A.³^ORCID,Bayram C.¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

2. Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

3. Department of Electrical and Computer Engineering, University of Illinois at Chicago, Illinois 60607, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4990424

Reference29 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

3. Electron mobility in an AlGaN/GaN two-dimensional electron gas I-carrier concentration dependent mobility

4. Mobility of electrons in bulk GaN andAlxGa1−xN/GaNheterostructures

5. Hot-phonon temperature and lifetime in a biasedAlxGa1−xN/GaNchannel estimated from noise analysis

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1. High-pure AlN crystalline thin films deposited on GaN at low temperature by plasma-enhanced ALD;Vacuum;2023-07

2. Light-Triggered Solid-State Circuit Breaker for DC Electrical Systems;Power Systems;2023

3. Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2021-12

4. Design guidelines suppressing dynamic punch-through in GaN vertical MOSFETs by considering the Poole–Frenkel effect;Applied Physics Express;2021-01-21

5. Surface ligand removal in atomic layer deposition of GaN using triethylgallium;Journal of Vacuum Science & Technology A;2021-01

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