Surface ligand removal in atomic layer deposition of GaN using triethylgallium-Reference-Cited by-同舟云学术

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Surface ligand removal in atomic layer deposition of GaN using triethylgallium

Published:2021-01 Issue:1 Volume:39 Page:012411
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Deminskyi Petro¹^ORCID,Hsu Chih-Wei¹^ORCID,Bakhit Babak¹^ORCID,Rouf Polla¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden

Funder

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Carl Tryggers Stiftelse för Vetenskaplig Forskning

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000752

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control polarity of gallium nitride on Si (1 1 1) using atomic layer annealing and thermal atomic layer deposition;Applied Surface Science;2024-12

2. Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD;Vacuum;2024-02

3. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024

4. Chemical vapor deposition of amorphous boron carbide coatings from mixtures of trimethylboron and triethylboron;Journal of Vacuum Science & Technology A;2023-11-13

5. Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3;Journal of Applied Physics;2023-08-17

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