Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD-Reference-Cited by-同舟云学术

Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD

Published:2024-02 Issue: Volume:220 Page:112806
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yun SeongUk^ORCID,Lee Ping-Che^ORCID,Kuo Cheng-Hsuan,Mcleod Aaron J.,Zhang Zichen^ORCID,Wang Victor,Huang James^ORCID,Kashyap Harshil,Winter Charles H.,Kummel Andrew C.^ORCID

Funder

University of California

University of California, San Diego

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference37 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Integrated gallium phosphide nonlinear photonics

3. Atomic Layer Deposition: An Overview

4. Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates

5. Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dry cleaning of InSb surfaces by hydrogen molecule exposure in ultrahigh vacuum;Applied Surface Science;2024-12

2. Control polarity of gallium nitride on Si (1 1 1) using atomic layer annealing and thermal atomic layer deposition;Applied Surface Science;2024-12

3. Metal Doped Nanocages and Metal Doped Nanotubes as Effective Catalysts for ORR and OER;Silicon;2024-08-16

4. Si48, SiNT(7, 0), B24N24 and BNNT(7, 0) as Acceptable Anode Materials in Mg-ion Batteries;Silicon;2024-07-17

5. A review of gallium phosphide nanophotonics towards omnipotent nonlinear devices;Nanophotonics;2024-07-12