Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534935
Reference12 articles.
1. An insulator-lined silicon substrate-via technology with high aspect ratio
2. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
3. Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
4. Undoped AlGaN/GaN HEMTs for microwave power amplification
5. Finite element modeling of a MMIC transmitter module for thermal/structural design optimization
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