Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate-Reference-Cited by-同舟云学术

Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Published:2015-12 Issue: Volume:365 Page:168-170
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Oikawa Takuya,Saijo Yusuke,Kato Shigeki,Mishima Tomoyoshi,Nakamura Tohru

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. High-breakdown-voltage pn-junction diodes on GaN substrates

2. Microwave annealing of Mg-implanted andin situBe-doped GaN

3. E.V. Kalinina, A.S. Zubrilov, A.M. Strel’chuk, V.A. Dmitriev, in: Proceedings of the Third European Conference on High Temperature Electronics, 1999, pp. 91–94.

4. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

5. Activation of Mg implanted in GaN by multicycle rapid thermal annealing

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