Author:
Feigelson B.N.,Anderson T.J.,Abraham M.,Freitas J.A.,Hite J.K.,Eddy C.R.,Kub F.J.
Funder
U.S. Naval Research Laboratory
Office of Naval Research
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Crystal polarity effects on magnesium implantation into GaN layer;Liu;Japanese Journal of Applied Physics,2010
2. Ion Implantation in Group III Nitrides, in Comprehensive Semiconductor Science and Technology;Pearton,2011
3. Mg in GaN: The Structure of The Acceptor and The Electrical Activity;Alves,2003
4. Annealing of GaN under high pressure of nitrogen;Porowski;Journal of Physics: Condensed Matter,2002
5. Electrical characteristics of GaN implanted with Si[sup +] at elevated temperatures;Irokawa;Applied Physics Letters,2005
Cited by
104 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献