Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Author:
Affiliation:
1. Naval Research LaboratoryWashingtonDC20375USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.3214
Reference6 articles.
1. Fabrication and performance of GaN electronic devices
2. Rapid thermal processing of implanted GaN up to 1500°C;Cao X.A.;MRS Internet J. Nitride Semicond. Res.,1999
3. Thermal activation of Mg‐doped GaN as monitored by electron paramagnetic resonance spectroscopy;Zvanut M.E.;J. Appl. Phys.,2004
4. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
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