P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=1/a=016501/pdf
Reference19 articles.
1. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
2. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
3. 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
4. Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
5. Electrical activation characteristics of silicon-implanted GaN
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