Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1644896
Reference21 articles.
1. Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
2. Photoluminescence of ion‐implanted GaN
3. Ion implantation doping and isolation of GaN
4. Ca and O ion implantation doping of GaN
5. Thermal annealing characteristics of Si and Mg‐implanted GaN thin films
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