Vertical GaN Junction Barrier Schottky Diode with p-NiO/n-GaN Hetero-Junction
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-3940-0_54
Reference18 articles.
1. Chen, K.J., et al.: GaN-on-Si power technology: Devices and applications. IEEE Trans. Electron Devices 64(3), 779–795 (2017)
2. Han, S., et al.: Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN schottky barrier diode. IEEE Trans. Power Electron. 34(6), 5012–5018 (2019)
3. Liu, X., et al.: 1.7-kV vertical GaN-on-GaN schottky barrier diodes with helium-implanted edge termination. IEEE Trans. Electron Devices 69(4), 1938–1944 (2022)
4. Yin, R., et al.: High voltage vertical GaN-on-GaN schottky barrier diode with high energy fluorine ion implantation based on space charge induced field modulation (SCIFM) effect. In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs, pp. 298–301. IEEE, Vienna, Austria (2020)
5. Han, S., et al.: High-voltage and high-ION/IOFF Vertical GaN-on-GaN schottky barrier diode with nitridation-based termination. IEEE Electron Device Lett. 39(4), 572–575 (2018)
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