High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170190.pdf?arnumber=9170190
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04
2. Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment;Applied Physics Letters;2023-11-20
3. Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy;IEEE Transactions on Electron Devices;2023-07
4. Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode;Microelectronic Engineering;2023-04
5. Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings;IEEE Transactions on Electron Devices;2023-04
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