1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination-Reference-Cited by-同舟云学术

1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Published:2022-04 Issue:4 Volume:69 Page:1938-1944
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Xinke¹^ORCID,Lin Feng¹,Li Jian¹^ORCID,Lin Yuheng¹,Wu Junye¹,Wang Haofan¹^ORCID,Li Xiaohua¹,Huang Shuangwu¹,Wang Qi²^ORCID,Chiu Hsien-Chin³^ORCID,Kuo Hao-Chung⁴

Affiliation:

1. College of Materials Science and Engineering, Institute of Microelectronics (IME), College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China

2. Dongguan Institute of Opto-Electronics, Peking University, Dongguan, China

3. Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

4. Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan

Funder

Key-Area Research and Development Program of Guangdong Province

Guangdong Science Foundation for Distinguished Young Scholars

Science and Technology Foundation of Shenzhen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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