Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination-Reference-Cited by-同舟云学术

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Published:2021-06-14 Issue:24 Volume:118 Page:243501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Xiaolu¹²^ORCID,Zhong Yaozong²³^ORCID,Chen Xin²^ORCID,Zhou Yu¹²³^ORCID,Su Shuai¹²^ORCID,Yan Shumeng¹²^ORCID,Liu Jianxun²³^ORCID,Sun Xiujian²,Sun Qian¹²³^ORCID,Yang Hui¹²³

Affiliation:

1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, People's Republic of China

2. Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China

3. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Foshan 528000, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049706

Reference40 articles.

1. Recent development of vertical GaN power devices

2. Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

3. Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

4. Leakage and breakdown mechanisms of GaN vertical power FinFETs

5. Gallium nitride vertical power devices on foreign substrates: a review and outlook

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