Study of drain-induced channel effects in vertical GaN junction field-effect transistors

Author:

Chen Zengfa,Yue Wen,Zhu Renqiang,Wang Min,Zhu Xi,Lin Jinpei,Huang Shuangwu,Liu XinkeORCID

Abstract

Abstract A normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) is demonstrated in this work. The device shows an on/off current ratio of 3.6 × 1010, a threshold voltage (V TH) of 1.64 V, and a specific on-resistance (R ON,SP) of 1.87 mΩ·cm2. Drain-induced channel effects were proposed to explain the change in the gate current at different drain voltages. Drain current decline in the output characteristics and the reverse turn-on between drain and source can be explained by effects. A technological computer-aided design was used to simulate the change of the depletion region and confirm the explanation. Detailed analyses of the channel effects provide a reference for the design of novel structures. The characteristics at different temperatures demonstrated the stability of threshold voltage and specific on-resistance, thus indicating the great potential of applications in switching power circuits of vertical GaN JFETs.

Funder

Guangdong Major Project of Basic and Applied Basic Research

Shenzhen Science and Technology Program

Guangdong Science Foundation for Distinguished Young Scholars

Publisher

IOP Publishing

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