Demonstration of fully vertical GaN‐on‐Si Schottky diode
Author:
Affiliation:
1. Research Center for Nano‐Devices and Advanced MaterialsNagoya Institute of TechnologyNagoya466‐8555Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.3166
Reference10 articles.
1. Gallium nitride devices for power electronic applications
2. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate
3. High voltage and high current density vertical GaN power diodes
4. Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
5. Fully and quasi‐vertical GaN‐on‐Si pin diodes: high performance and comprehensive comparison;Zhang X.;Trans. Electron Devices,2017
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