Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

Author:

Scandurra AntoninoORCID,Testa Matteo,Franzò Giorgia,Greco Giuseppe,Roccaforte Fabrizio,Castagna Maria Eloisa,Calabretta Cristiano,Severino Andrea,Iucolano Ferdinando,Bruno Elena,Mirabella Salvatore

Funder

Governo Italiano Ministero dell'Istruzione dell'Universita e della Ricerca

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Above 2000V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors;Herbecq;Phys. Status Solidi A,2016

2. GaN transistors for power switching and millimeter-wave applications;Ueda;Int. J. High Speed Electron. Syst.,2009

3. Recent Advances in Wide-Bandgap Semiconductor Biological and Gas Sensors, Semiconductor Device-Based Sensors for Gas, Chemical, and Bio Applications;Ren,2011

4. Optoelectronic devices on AlGaN/GaN HEMT platform;Li;Phys. Status Solidi A,2016

5. Nanometric AlGaN/GaN HEMT performance with implant or mesa isolation;Sun;IEEE Electron. Device Lett.,2011

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