Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS-Reference-Cited by-同舟云学术

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Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS

Published:2014-06-23 Issue:S1 Volume:46 Page:22-24
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Houssiau L.¹,Noël C.¹,Mine N.¹,Jung K. W.²,Min W. J.³,Moon D. W.²

Affiliation:

1. Research Centre in Physics of Matter and Radiation; University of Namur; 61 rue de Bruxelles B 5000 Namur Belgium

2. Department of New Biology; DGIST; Sang-Ri 50-1 Dalseong Daegu 711-873 Korea

3. K-MAC; Yongsan-Dong 554 Yuseong-Gu Daejeon 305-500 Korea

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5614/fullpdf

Reference12 articles.

1. Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding

2. Molecular depth profiling of polymers with very low energy ions

3. Comparative Study of the Usefulness of Low Energy Cs+, Xe+, and O2+ Ions for Depth Profiling Amino-Acid and Sugar Films

4. Factors affecting the retention of Cs+ primary ions in Si

5. Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling

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1. Features of semiconductor irradiation with low-energy caesium ions;Vacuum;2021-12

2. Determination of Dimension and Conformal Arsenic Doping Profile of a Fin Field Effect Transistors by Time-of-Flight Medium Energy Ion Scattering;Analytical Chemistry;2019-07-05

3. Temperature dependent Cs retention, distribution, and ion yield changes during Cs+ bombardment SIMS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-05

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