Understanding the Potential of 2D Ga 2 O 3 in Flexible Optoelectronic Devices: Impact of Uniaxial Strain and Electric Field-Reference-Cited by-同舟云学术

Understanding the Potential of 2D Ga 2 O 3 in Flexible Optoelectronic Devices: Impact of Uniaxial Strain and Electric Field

Published:2019-07-19 Issue:9 Volume:2 Page:1900106
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Guo Rui¹,Su Jie¹,Lin Zhenhua¹,Zhang Junjing¹,Qin Yu¹,Zhang Jincheng¹,Chang Jingjing¹^ORCID,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China

Funder

National Natural Science Foundation of China

China Association for Science and Technology

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

Multidisciplinary,Modelling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.201900106

Reference36 articles.

1. Perspective—Opportunities and Future Directions for Ga2O3

2. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

3. Recent progress in Ga2O3power devices

4. High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts

5. β -Ga 2 O 3 / p -Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity

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