Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage-Reference-Cited by-同舟云学术

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Published:2016-11-21 Issue:21 Volume:109 Page:213501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chabak Kelson D.¹²,Moser Neil³,Green Andrew J.⁴,Walker Dennis E.¹,Tetlak Stephen E.¹,Heller Eric⁵,Crespo Antonio¹,Fitch Robert¹,McCandless Jonathan P.⁴^ORCID,Leedy Kevin¹,Baldini Michele⁶,Wagner Gunter⁶,Galazka Zbigniew⁶,Li Xiuling²,Jessen Gregg¹

Affiliation:

1. Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA

2. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois-Urbana-Champaign, Urbana, Illinois 61801, USA

3. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030, USA

4. Wyle Laboratories, Inc., 4200 Colonel Glenn Hwy, Beavercreek, Ohio 45431, USA

5. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA

6. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, Germany

Funder

Division of Materials Research (DMR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4967931

Reference36 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Development of gallium oxide power devices

3. Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

4. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

5. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Cited by 320 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

2. Temperature modulation enables in situ growth of gallium oxide nanostructures on thin films exhibiting diverse morphologies;Ceramics International;2024-09

3. Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions;Applied Physics Letters;2024-08-12

4. Rf/analog and linearity performance of field-plate engineered AlN/$$\beta$$-Ga2O3 MOSHEMT for high power and microwave applications;Microsystem Technologies;2024-08-06

5. Barrier height enhancement in β-Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer;Applied Physics Letters;2024-08-05