Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks-Reference-Cited by-同舟云学术

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Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

Published:2007-08 Issue:8 Volume:244 Page:2816-2837
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Calleja E.,Ristić J.,Fernández-Garrido S.,Cerutti L.,Sánchez-García M. A.,Grandal J.,Trampert A.,Jahn U.,Sánchez G.,Griol A.,Sánchez B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference61 articles.

1. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

2. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

3. Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

4. Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

5. Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

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