Low-Temperature Selective Area Epitaxy of GaN Nanowires: Toward a Top-Surface Morphology Controllable, Fully Epitaxial Nanophotonic Platform
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Funder
Fonds de Recherche du Qu?bec - Nature et Technologies
Natural Sciences and Engineering Research Council of Canada
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c04117
Reference52 articles.
1. III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
2. Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics
3. GaN based nanorods for solid state lighting
4. III-Nitride nanowire optoelectronics
5. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
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