Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties-Reference-Cited by-同舟云学术

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Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

Published:1999-05 Issue: Volume:201-202 Page:296-317
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Calleja E,Sánchez-Garcı́a M.A,Sánchez F.J,Calle F,Naranjo F.B,Muñoz E,Molina S.I,Sánchez A.M,Pacheco F.J,Garcı́a R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference104 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy

3. Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

5. Time‐resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si

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1. Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters;AIP Advances;2024-02-01

2. Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy;APL Materials;2023-11-01

3. Growth of III-nitrides on Si(111) and its application to photodiodes;Digest Journal of Nanomaterials and Biostructures;2023-10-30

4. Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2023-06

5. Tunnel Junction Engineered Photocarrier Dynamics in Epitaxial Semiconductor Nanowires for Efficient and Ultrafast Photoelectrochemical Photodetectors;ACS Photonics;2023-05-10

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