Microstructure and photoluminescence of GaN grown on Si(111) by plasma‐assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113074
Reference19 articles.
1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
2. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
3. Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy
4. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
5. Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
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