Polarity in GaN and ZnO: Theory, measurement, growth, and devices-Reference-Cited by-同舟云学术

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Published:2016-12 Issue:4 Volume:3 Page:041303
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Zúñiga-Pérez Jesús,Consonni Vincent,Lymperakis Liverios,Kong Xiang,Trampert Achim^ORCID,Fernández-Garrido Sergio,Brandt Oliver^ORCID,Renevier Hubert,Keller Stacia,Hestroffer Karine,Wagner Markus R.^ORCID,Reparaz Juan Sebastián,Akyol Fatih,Rajan Siddharth,Rennesson Stéphanie,Palacios Tomás,Feuillet Guy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963919

Reference827 articles.

1. Nobel Lecture: Fascinated journeys into blue light

2. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

3. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

4. The benefit of disorder

5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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