Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Subnanometer-thick 2D GaN film with a large bandgap synthesized by plasma enhanced chemical vapor deposition

Published:2022 Issue:8 Volume:10 Page:4053-4059
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhang Gehui¹,Chen Luchen¹,Wang Le¹,Lu Zhanjie¹,Dong Haoyu¹,Cheng Zhihai¹^ORCID,Zhang Xu²^ORCID,Xu Xiaohui³,Wang Bin³^ORCID,Chen Shanshan¹^ORCID

Affiliation:

1. Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, China

2. Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

3. National Center for Nanoscience and Technology, Beijing 100190, China

Abstract

An improved template method has been developed to synthesize subnanometer-thick 2D GaN films through the balance of nitridation and ion etching during N2 plasma enhanced CVD.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Renmin University of China

Science and Technology Projects of Fujian Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D1TA10450K

Reference49 articles.