Band alignments tuned by spontaneous polarization in two-dimensional MoS2/GaN van der Waals heterostructures-Reference-Cited by-同舟云学术

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Band alignments tuned by spontaneous polarization in two-dimensional MoS2/GaN van der Waals heterostructures

Published:2022-09 Issue: Volume:143 Page:115360
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wang Boyu,Ning Jing,Zhang Jincheng,Wang Dong,Hao Yue

Funder

Shaanxi University of Science and Technology

Key Science and Technology Program of Shaanxi Province

Xidian University

Natural Science Basic Research Program of Shaanxi Province

Natural Science Foundation of Shaanxi Province

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Recent advances in ultrathin two-dimensional nanomaterials;Tan;Chem. Rev.,2017

2. Progress, challenges, and opportunities in two-dimensional materials beyond graphene;Butler;ACS Nano,2013

3. Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications;Wang;Appl. Phys. Lett.,2021

4. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

5. Large scale growth and characterization of atomic hexagonal boron nitride layers;Song;Nano Lett.,2010

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1. Influence of the electric field on the electronic structure of flat hexagonal two-dimensional GaN bilayers;Materials Today Communications;2024-12

2. Diamond/cubic boron nitride (111) heterojunction interface: Rational regulation of high two-dimonsional electron gas;Surfaces and Interfaces;2024-08

3. Van der Waals epitaxial AlGaN/GaN growth on hexagonal BN via two-dimensional N-induced dislocation slip;Scripta Materialia;2024-07

4. Electronic properties by polarization-inducing of the F-GaN-H/SiC van der Waals hetero-structures;Vacuum;2024-03

5. MoSi2N4/WO2 van der Waals heterostructure: Theoretical prediction of an effective strategy to boost MoSi2N4′s nanoelectronic and optoelectronic applications;Computational Materials Science;2024-01

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