Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga<sub>2</sub>O<sub>3</sub> Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices-Reference-Cited by-同舟云学术

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Published:2023-02-08 Issue:4 Volume:6 Page:3027-3035
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Liu Qing¹²,Guo Jiaming¹²,Li Jing¹²,Feng Lizhi¹²,Chen Lixin¹²,Hua Zhe¹²,Yang Liu³,Zhang Xinglai³^ORCID,Liu Baodan¹²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China

2. Foshan Graduate School of Innovation, Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan 528300, China

3. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, No. 72, Wenhua Road, Shenyang 110016, China

Funder

Central University Basic Research Fund of China

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Scientific Research Project of Foshan Talents

Foshan Graduate School of Innovation, Northeastern University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.2c05459