Tuning the optoelectronic properties of two-dimensional β-Ga2O3 using surface passivation and the layer thickness

Author:

Wang Xueting,Liu Defeng,Wang Xiaowei,Liu Zhun,Luo Shulin

Funder

China Postdoctoral Science Foundation

Shandong Province Natural Science Foundation

Publisher

Elsevier BV

Reference56 articles.

1. Stability and electronic properties of two-dimensional Ga2O3 and (MxGa1-x)2O3 (M = Al, Ga) alloys;Jia;Appl. Surf. Sci.,2023

2. Two-dimensional nitrides extend the β-Ga2O3 application by controlling the band levels in β-Ga2O3 based heterostructure;Yuan;Mater. Today Phys.,2023

3. On the nature of majority and minority traps in β-Ga2O3: A review;Labed;Mater. Today Phys.,2023

4. The calculated electronic and optical properties of β-Ga2O3;Wang;J. Mol. Model.,2024

5. First-principles study of the influence of Nb doping on the electronic structure and optoelectronic properties of β-Ga2O3;Yang;Phys. Lett. A,2022

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