First-principles study of the influence of Nb doping on the electronic structure and optoelectronic properties of β-Ga2O3-Reference-Cited by-同舟云学术

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First-principles study of the influence of Nb doping on the electronic structure and optoelectronic properties of β-Ga2O3

Published:2022-05 Issue: Volume:433 Page:128025
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Yang Xin-ya,Wen Shu-min,Chen Ding-du,Li Ting,Zhao Chun-wang

Funder

National Natural Science Foundation of China

Natural Science Foundation of Inner Mongolia

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference50 articles.

1. Polymorphism of Ga2O3 and the system Ga2O3-H2O;Roy;J. Am. Chem. Soc.,1952

2. Recent progress in the growth of β-Ga2O3 for power electronics applications;Baldini;Mater. Sci. Semicond. Process.,2018

3. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

4. Deep-ultraviolet transparent conductive β-Ga2O3 thin films;Orita;Appl. Phys. Lett.,2000

5. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics;Kim;Phys. Chem. Chem. Phys.,2016

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1. Tuning the optoelectronic properties of two-dimensional β-Ga2O3 using surface passivation and the layer thickness;Computational Materials Science;2025-01

2. First-principle calculations of the electronic structure and optical properties of β-Ga2O3 with various vacancy defects;Vacuum;2024-11

3. First‐Principles Study on the Effects of Different Valence H_i and V_O on the Mobility, Conductivity, and Carrier Lifetime of β‐Ga₂O₃: Mo^5+/6+;physica status solidi (b);2024-07-28

4. Effect of Selenium Doping on the Electronic Properties of β-Ga2O3 by First-Principles Calculations;Journal of Electronic Materials;2024-07-24

5. Study on the effects of VO and Hi on the absorption spectrum and conductivity of Ti doped β-Ga2O3;Materials Today Communications;2024-06

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