Study on the effects of VO and Hi on the absorption spectrum and conductivity of Ti doped β-Ga2O3

Author:

Yang Xin-ya,Wen Shu-min,Chen Ding-du,Liu Xia,Ha Si-hua,Zhao Er-jun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference60 articles.

1. Electronic structure and chemical bonding in transition-metal-mixed gallium oxide (Ga2O3) compounds;Ramana;J. Phys. Chem. Solids,2021

2. Electrical and optical properties of Zr doped β-Ga2O3 single crystals;Saleh;Appl. Phys. Express,2019

3. Observation of impurity band conduction and variable range hopping in heavily doped (010) β-Ga2O3;Kabilova;Semicond. Sci. Tech.,2019

4. Deep level acceptors of Zn-Mg divalent ions dopants in β-Ga2O3 for the difficulty to p-type conductivity;Su;J. Alloy. Compd.,2019

5. Electronic structure of tungsten-doped β-Ga2O3 compounds;Zade;Ecs. J. Solid. State Sc.,2019

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