Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy-Reference-Cited by-同舟云学术

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Published:2023-11-01 Issue:11 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Raghuvansy Sushma¹^ORCID,McCandless Jon P.¹²^ORCID,Schowalter Marco¹^ORCID,Karg Alexander¹^ORCID,Alonso-Orts Manuel¹³^ORCID,Williams Martin S.¹^ORCID,Tessarek Christian¹^ORCID,Figge Stephan¹,Nomoto Kazuki²^ORCID,Xing Huili Grace²⁴⁵^ORCID,Schlom Darrell G.⁴⁵⁶^ORCID,Rosenauer Andreas¹³,Jena Debdeep²⁴⁵^ORCID,Eickhoff Martin¹³,Vogt Patrick¹⁴^ORCID

Affiliation:

1. Institute of Solid-State Physics, University of Bremen 1 , Otto-Hahn-Allee 1, 28359 Bremen, Germany

2. School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853, USA

3. MAPEX Center for Materials and Processes, University of Bremen 3 , 28359 Bremen, Germany

4. Department of Material Science and Engineering, Cornell University 4 , Ithaca, New York 14853, USA

5. Kavli Institute at Cornell for Nanoscale Science, Cornell University 5 , Ithaca, New York 14853, USA

6. Leibniz-Institut für Kristallzüchtung 6 , Max-Born-Str. 2, 12489 Berlin, Germany

Abstract

The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide-catalyzed epitaxy (MOCATAXY). We grow phase-pure β-Ga2O3(2̄01) and phase-pure ϵ/κ-Ga2O3(001) with smooth surfaces by S-MBE and MOCATAXY. Thin film analysis shows that the crystallographic and surface features of the β-Ga2O3(2̄01)/AlN(0001) and ϵ/κ-Ga2O3(001)/AlN(0001) epilayers are of high crystalline quality. Growth and phase diagrams are developed to synthesize Ga2O3 on AlN by MBE and MOCATAXY and to provide guidance to grow Ga2O3 on several non-oxide surfaces, e.g., AlN, GaN, and SiC, by MBE, S-MBE, and MOCATAXY.

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0174373/18208620/111113_1_5.0174373.pdf

Reference69 articles.

1. A Review of Current Research Trends in Power-Electronic Innovations in Cyber–Physical Systems

2. AlGaN/GaN HEMTs-an overview of device operation and applications

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1. Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)];APL Materials;2024-01-01