Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks-Reference-Cited by-同舟云学术

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Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0001) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

Published:1998-06 Issue: Volume:189-190 Page:138-141
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yoshizawa Masaki,Kikuchi Akihiko,Fujita Nobuhiko,Kushi Kouichi,Sasamoto Hajime,Kishino Katsumi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. GaN, AlN, and InN: A review

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Shortest wavelength semiconductor laser diode

4. Multidimensional quantum well laser and temperature dependence of its threshold current

5. Self-organized growth of strained InGaAs quantum disks

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