Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124409
Reference9 articles.
1. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
2. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. GaAs planar technology by molecular beam epitaxy (MBE)
5. Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)
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