Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference44 articles.
1. A new method for the growth of GaAs epilayer at low H2 pressure
2. Metalorganic CVD of GaAs in a molecular beam system
3. Current status review and future prospects of CBE, MOMBE and GSMBE
4. Potentially and challenge of metal-organic molecular beam epitaxy
5. Y. Kawaguchi, H. Asahi and N. Nagai, in: Extended Abstracts 18th (1986 Intern.) Conf. on Solid State Devices and Materials, Tokyo, 1986, p. 619.
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