Potentially and challenge of metal-organic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Potentially and challenge of metal-organic molecular beam epitaxy

Published:1991-07 Issue:1-3 Volume:9 Page:83-91
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Heinecke H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Metalorganic CVD of GaAs in a molecular beam system

2. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

3. GaAs growth in metal–organic MBE

4. A mass spectrometric study of AsH3 and PH3 gas sources for molecular beam epitaxy

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GRINSCH GaInAsP MQW laser structures grown by MOMBE;Journal of Crystal Growth;1998-06

2. Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE;Journal of Crystal Growth;1998-06

3. Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE;Journal of Crystal Growth;1997-05

4. Zn doping of device structures in metalorganic molecular beam epitaxy using diethylzinc;Journal of Crystal Growth;1996-07

5. Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995

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