Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer-Reference-Cited by-同舟云学术

Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Published:2022-03-20 Issue: Volume: Page:2100583
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Segantini Greta¹²^ORCID,Barhoumi Rabei¹,Manchon Benoît³,Cañero Infante Ingrid³,Rojo Romeo Pedro¹,Bugnet Matthieu⁴,Baboux Nicolas³,Nirantar Shruti²,Deleruyelle Damien³,Sriram Sharath²,Vilquin Bertrand¹

Affiliation:

1. Univ Lyon Ecole Centrale Lyon INSA Lyon UCBL CPE Lyon CNRS INL UMR5270 69130 Ecully France

2. Functional Materials and Microsystems Research Group and Micro Nano Research Facility RMIT University Melbourne VIC 3000 Australia

3. Univ Lyon INSA Lyon Ecole Centrale Lyon UCBL CPE Lyon CNRS INL UMR5270 69621 Villeurbanne France

4. Univ Lyon CNRS INSA Lyon UCBL MATEIS INL UMR5510 69621 Villeurbanne France

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100583

Reference45 articles.

1. T.Böscke J.Müller D.Bräuhaus U.Schröder U.Böttger in2011 Int. Electron Devices Meeting IEEE Piscataway NJ2011 pp.24–25.

2. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

3. Ferroelectric materials for neuromorphic computing

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

5. Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

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