Quantification of Crystalline Phases in Hf0.5Zr0.5O2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations-Reference-Cited by-同舟云学术

Quantification of Crystalline Phases in Hf_0.5Zr_0.5O₂ Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations

Published:2024-01-12 Issue:3 Volume:16 Page:3829-3840
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cervasio Rebecca¹,Amzallag Emilie²,Verseils Marine¹^ORCID,Hemme Pierre¹,Brubach Jean-Blaise¹^ORCID,Infante Ingrid Cañero³^ORCID,Segantini Greta⁴^ORCID,Rojo Romeo Pedro⁴,Coati Alessandro¹,Vlad Alina¹,Garreau Yves¹,Resta Andrea¹^ORCID,Vilquin Bertrand⁴,Creuze Jérôme²^ORCID,Roy Pascale¹^ORCID

Affiliation:

1. L’Orme des Merisiers, Synchrotron SOLEIL, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex, France

2. ICMMO/SP2M, UMR 8182, Université Paris-Saclay, Bat. 670 Avenue des Sciences, 91400 Orsay-F, France

3. Institut des Nanotechnologies de Lyon, CNRS UMR5270 ECL INSA UCBL CPE, 69621 Villeurbanne Cedex, France

4. Université de Lyon, Institut des Nanotechnologies de Lyon (UMR5270/CNRS), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, F-69134 Ecully Cedex, France

Funder

Ecoles doctorales, Universit? Paris-Saclay

HORIZON EUROPE Marie Sklodowska-Curie Actions

Horizon 2020 Framework Programme

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c13848

Reference41 articles.

1. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2. Enhanced ferroelectricity in ultrathin films grown directly on silicon

3. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

4. Phase Control in Hafnia: New Synthesis Approach and Convergence of Average and Local Structure Properties

5. Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

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