Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si-Reference-Cited by-同舟云学术

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

Published:2016-03-14 Issue:11 Volume:8 Page:7232-7237
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chernikova Anna¹,Kozodaev Maksim¹,Markeev Andrei¹,Negrov Dmitrii¹,Spiridonov Maksim¹,Zarubin Sergei¹,Bak Ohheum²,Buragohain Pratyush²,Lu Haidong²,Suvorova Elena¹³⁴,Gruverman Alexei²,Zenkevich Andrei¹⁵

Affiliation:

1. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia

2. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588-0299, United States

3. École Polytechnique Fédérale de Lausanne, Lausanne, CH-1015, Switzerland

4. A.V. Shubnikov Institute of Crystallography, Leninsky pr. 59, Moscow 119333, Russia

5. NRNU “Moscow Engineering Physics Institute”, Moscow 115409, Russia

Funder

Semiconductor Research Corporation

Division of Materials Research

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b11653

Reference39 articles.

1. Two-dimensional ferroelectric films

2. Observation of Nanoscale180°Stripe Domains in FerroelectricPbTiO3Thin Films

3. Ferroelectricity in Ultrathin Perovskite Films

4. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

5. Critical thickness for ferroelectricity in perovskite ultrathin films

Cited by 203 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. V.B. Aleskovskii's Leading Scientific Highly Organized Substance Chemistry School: from Fundamental Research to Widespread Practical Implementation;Журнал неорганической химии;2024-09-05

2. Magnetically-induced enhancement of photocatalytic dye decomposition in ferroelectric Hf0.5Zr0.5O2 films;Ceramics International;2024-09

3. Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions;Journal of Physics D: Applied Physics;2024-08-29

4. Insights into the origin of robust ferroelectricity in HfO2 -based thin films from the order-disorder transition driven by vacancies;Physical Review Applied;2024-08-09

5. Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin Films by Charge Transfer;Physical Review Letters;2024-07-18