Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films-Reference-Cited by-同舟云学术

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

Published:2016-06-09 Issue:24 Volume:8 Page:15466-15475
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Min Hyuk¹²,Kim Han Joon¹,Kim Yu Jin¹,Lee Young Hwan¹,Moon Taehwan¹,Kim Keum Do¹,Hyun Seung Dam¹,Fengler Franz²,Schroeder Uwe²,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

2. NaMLab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b03586

Reference36 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

5. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

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