Space–Charge Profiles and Carrier Transport Properties in Dopant‐Free GaN‐Based p‐n Junction Formed by Distributed Polarization Doping-Reference-Cited by-同舟云学术

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Space–Charge Profiles and Carrier Transport Properties in Dopant‐Free GaN‐Based p‐n Junction Formed by Distributed Polarization Doping

Published:2022-05-23 Issue:7 Volume:16 Page:2200127
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Kumabe Takeru¹^ORCID,Kawasaki Seiya¹,Watanabe Hirotaka²,Nitta Shugo²^ORCID,Honda Yoshio²,Amano Hiroshi²³⁴

Affiliation:

1. Department of Electronics Nagoya University Nagoya 464-8603 Japan

2. Institute of Materials and Systems for Sustainability Nagoya University Nagoya 464-8601 Japan

3. Venture Business Laboratory Nagoya University Nagoya 464-8603 Japan

4. Akasaki Research Center Nagoya University Nagoya 464-8601 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200127

Reference47 articles.

1. Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

2. Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

3. Impact ionization coefficients and critical electric field in GaN

4. Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

5. A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes;IEEE Photonics Journal;2024-08

2. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping;IEEE Transactions on Electron Devices;2024-05

3. Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping;physica status solidi (a);2024-04-08

4. Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates;Applied Physics Letters;2024-03-04

5. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN;Applied Physics Letters;2023-12-18

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