Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

Published:2020-07-06 Issue:1 Volume:117 Page:012103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fujikura Hajime¹^ORCID,Konno Taichiro¹,Kimura Takeshi¹,Narita Yoshinobu¹,Horikiri Fumimasa¹^ORCID

Affiliation:

1. SCIOCS Co. Ltd., Hitachi, Ibaraki 319-1418, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0014528

Reference25 articles.

1. Silicon carbide benefits and advantages for power electronics circuits and systems

2. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

3. Vertical Power p-n Diodes Based on Bulk GaN

4. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

5. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method;Applied Physics Letters;2024-07-08

2. Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods;Journal of Crystal Growth;2024-06

3. A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall;physica status solidi (RRL) – Rapid Research Letters;2024-04-02

4. Role of carbon in n-type bulk GaN crystals;Journal of Crystal Growth;2024-04

5. GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices;physica status solidi (RRL) – Rapid Research Letters;2024-03-10